Semiconductor device and method of manufacturing the same

ABSTRACT

A semiconductor device according to an embodiment includes: a stacked body including a plurality of first conductive films stacked via an inter-layer insulating film; a first conductive body facing the stacked body to extend in a stacking direction; and a plurality of first insulating films in the same layers as the first conductive films and disposed between the first conductive body and the first conductive films, the first conductive body including a projecting part that projects along tops of one of the first insulating films and one of the first conductive films, and a lower surface of the projecting part contacting an upper surface of the one of the first conductive films.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is based upon and claims the benefit of priority fromthe prior U.S. Provisional Application 62/301,903, filed on Mar. 1,2016, the entire contents of which are incorporated herein by reference.

BACKGROUND

Field

Embodiments of the present invention relate to a semiconductor deviceand a method of manufacturing the same.

Description of the Related Art

A flash memory is a semiconductor device known for its low cost andlarge capacity. One example of a semiconductor device to replace theflash memory is a variable resistance type memory (ReRAM: ResistanceRAM) which employs a variable resistance film in its memory cell. TheReRAM can configure a cross-point type memory cell array, hence canachieve an increased capacity similarly to the flash memory. Moreover,in order to further increase capacity, there is also being developed aReRAM having a so-called VBL (Vertical Bit Line) structure in which bitlines which are selection wiring lines are arranged in a perpendiculardirection to a semiconductor substrate.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a view showing functional blocks of a semiconductor deviceaccording to a first embodiment.

FIG. 2 is a circuit diagram of a memory cell array of the semiconductordevice according to the same embodiment.

FIG. 3 is a schematic perspective view of the memory cell array of thesemiconductor device according to the same embodiment.

FIG. 4 is a perspective view showing a schematic structure of a contactregion of the memory cell array of the semiconductor device according tothe same embodiment.

FIG. 5 is a cross-sectional view of the contact region of the memorycell array of the semiconductor device according to the same embodiment.

FIGS. 6 to 13 are cross-sectional views describing manufacturing stepsof the contact region of the memory cell array of the semiconductordevice according to the same embodiment.

FIG. 14 is a cross-sectional view of a contact region of a memory cellarray of a semiconductor device according to a second embodiment.

FIGS. 15 to 18 are cross-sectional views describing manufacturing stepsof the contact region of the memory cell array of the semiconductordevice according to the same embodiment.

DETAILED DESCRIPTION

A semiconductor device according to an embodiment including: a stackedbody including a plurality of first conductive films stacked via aninter-layer insulating film; a first conductive body facing the stackedbody to extend in a stacking direction; and a plurality of firstinsulating films in the same layers as the first conductive films anddisposed between the first conductive body and the first conductivefilms, the first conductive body including a projecting part thatprojects along tops of one of the first insulating films and one of thefirst conductive films, and a lower surface of the projecting partcontacting an upper surface of the one of the first conductive films.

Semiconductor devices and methods of manufacturing the same according toembodiments will be described below with reference to the drawings.

First Embodiment

First, an overall configuration of a semiconductor device according to afirst embodiment will be described. Note that hereafter, a semiconductordevice of three-dimensional structure employing a memory cell includinga variable resistance element will be described as an example. However,all of the embodiments described hereafter may be applied also toanother semiconductor device having a three-dimensional structure,including the case where a memory cell including a charge accumulationfilm is employed, and so on.

FIG. 1 is a view showing functional blocks of the semiconductor deviceaccording to the present embodiment.

As shown in, FIG. 1, the semiconductor device of the present embodimentcomprises: a memory cell array 1; a row decoder 2; a column decoder 3; ahigher block 4; a power supply 5; and a control circuit 6.

The memory cell array 1 includes: a plurality of word lines WL(conductive films) and a plurality of bit lines BL (conductive films)that intersect each other; and a plurality of memory cells MC disposedat intersections of these word lines WL and bit lines BL. The rowdecoder 2 selects the word line WL during an access operation. Thecolumn decoder 3 selects the bit line BL during an access operation, andincludes a driver that controls the access operation. The higher block 4selects the memory cell MC which is to be an access target in the memorycell array 1. The higher block 4 provides a row address and a columnaddress to, respectively, the row decoder 2 and the column decoder 3.The power supply 5, during write/read of data, generates certaincombinations of voltages corresponding to respective operations, andsupplies these combinations of voltages to the row decoder 2 and thecolumn decoder 3. The control circuit 6 performs control of the likes ofsending the addresses to the higher block 4, and, moreover, performscontrol of the power supply 5, based on a command from external.

Hereafter, the memory cell array 1 will be described.

FIG. 2 is a circuit diagram of the memory cell array of thesemiconductor device according to the present embodiment; and FIG. 3 isa schematic perspective view of the memory cell array of the samesemiconductor device.

As shown in FIG. 2, the memory cell array 1 includes a select transistorSTR, a global bit line GBL, and a select gate line SG, in addition tothe previously mentioned word line WL, bit line BL, and memory cell MC.

As shown in FIG. 3, the memory cell array 1 has a so-called VBL(Vertical Bit Line) structure in which the bit line BL extendsperpendicularly to a principal plane of a semiconductor substrate SS. Inother words, the word lines WL are arranged in a matrix in a Y directionand a Z direction (stacking direction), and extend in an X direction.The bit lines BL are arranged in a matrix in the X direction and the Ydirection, and extend in the Z direction. Moreover, the memory cell MCis disposed at an intersection of the word line WL and the bit line BL.Due to the above, the memory cells MC are arranged in athree-dimensional matrix in the X direction, the Y direction, and the Zdirection.

As shown in FIG. 2, the memory cell MC includes a variable resistanceelement VR. The variable resistance element VR undergoes transitionbetween a high-resistance state and a low-resistance state, based on anapplied voltage. The memory cell MC stores data in a nonvolatile mannerby a resistance state of this variable resistance element VR. Thevariable resistance element VR generally has: a setting operation whereit undergoes transition from the high-resistance state (reset state) tothe low-resistance state (set state); and a resetting operation where itundergoes transition from the low-resistance state (set state) to thehigh-resistance state (reset state). In addition, the variableresistance element VR has a forming operation required only immediatelyafter manufacturing. This forming operation is an operation in which aregion (filament path) where locally it is easy for a current to flow isformed in the variable resistance element VR. The forming operation isexecuted by applying to both ends of the variable resistance element VRa voltage which is higher than an applied voltage employed during thesetting operation and the resetting operation.

The select transistor STR is disposed between the global bit line GBLand a lower end of the bit line BL. As shown in FIG. 3, the global bitlines GBL are arranged in the X direction, and extend in the Ydirection. Each of the global bit lines GEL is commonly connected to oneends of a plurality of the select transistors STR arranged in the Ydirection.

The select transistor STR is controlled by the select gate line SGfunctioning as a gate. The select gate lines SG are arranged in the Ydirection, and extend in the X direction. A plurality of the selecttransistors STR arranged in the X direction are collectively controlledby one select gate line SG functioning as gates of these selecttransistors STR. On the other hand, in the case of FIG. 3, a pluralityof the select transistors STR arranged in the Y direction areindependently controlled by separately provided select gate lines SG.

Next, a connection structure of the memory cell array 1 and a peripheralcircuit on the semiconductor substrate will be described exemplifying aconnection structure of the word line WL and the peripheral circuit.Hereafter, a region where a connection wiring line with the peripheralcircuit is disposed, of the memory cell array 1 will be called a“contact region 1 b”. Note that hereafter, description is made using anexample where the memory cell array 1 has word lines WL<0> to WL<3>, butthe embodiments described hereafter are not limited to this.

FIG. 4 is a perspective view showing a schematic structure of thecontact region of the memory cell array of the semiconductor deviceaccording to the present embodiment.

As shown in FIG. 4, each of the word lines WL<i> (i=0 to 3) connected tothe memory cell MC is electrically connected to the peripheral circuit(not illustrated) disposed on the semiconductor substrate, via two viasZ1<i> (conductive body) and Z0<i> (conductive film). Each of the wordlines WL<i> has a contact portion WLb<i> for contacting with the viaZ1<i>, in the contact region 1 b. Each of the vias Z1<i> is formed so asto extend in the Z direction and penetrate the contact portion WLb<i>.Formed in each of the vias Z1<i>, on at least both side surfaces facingin the X direction, is a projecting part Z1 b<i> that projects. The viaZ1<i> contacts the word line WL<i> by a bottom surface which is one ofside surfaces of this projecting part Z1 b<i> contacting an uppersurface of the contact portion WLb<i>. On the other hand, each of thevias Z0<i> is disposed between the semiconductor substrate and thelowermost layer word line WL<0>, and is electrically connected to theperipheral circuit at a bottom surface of the via Z0<i>. Moreover, theword line WL<i> and the peripheral circuit are electrically connected bya bottom surface of the via Z1<i> and an upper surface of the via Z0<i>being in contact.

Now, each of the word lines WL<i> is stacked in the Z direction, hencewhen disposing the via Z1<i>, care must be taken about interferencebetween the via Z1<i> and the word line WL<j> (j=0 to 3, excluding i)other than the word line WL<i>.

In this respect, in the present embodiment, the contact portion WLb<i>of the word line WL<i> is formed at a position projected from anarrangement region of the word line WL<u> (u=i to 3) in a higher layerthan the word line WL<i>. In the case of the example of FIG. 4, ends ofthe word lines WL stacked in the Z direction are formed in a steppedshape, and a portion corresponding to a step of the stepped shapefunctions as the contact portion WLb. As a result, interference betweenthe via Z1<i> and the higher layer word line WL<u> can be avoided.

However, interference between the via Z1<i> and the word line WL<l> (l=0to i−1) cannot be avoided by this alone.

Therefore, in the present embodiment, the connection structure of theword line WL and the peripheral circuit is further configured asfollows.

FIG. 5 is a cross-sectional view of the contact region of the memorycell array of the semiconductor device according to the presentembodiment. FIG. 5 is a cross-sectional view of ranges a101 to a104indicated by the dot-chain lines and broken lines shown in FIG. 4.

The memory cell array 1 includes: the via Z0; an inter-layer insulatingfilm 102 that insulates between the vias Z0 adjacent in the X direction;an etching stop film 103 disposed on the via Z0 and the inter-layerinsulating film 102; an inter-layer insulating film 104 and the wordline WL disposed alternately on the etching stop film 103; aninter-layer insulating film 106 disposed on the uppermost layer wordline WL<i> (i=0 to 3) in each of places (positions indicated by theranges a101 to a104) viewed from the Z direction; and an inter-layerinsulating film 107 disposed on the inter-layer insulating film 106.Now, the via Z0 is formed from titanium nitride (TiN), for example. Theinter-layer insulating films 102, 104, and 107 are formed from siliconoxide (SiO₂), for example. The etching stop film 103 is formed from ametal oxide, for example. The word line WL is formed from titaniumnitride (TiN), for example. The inter-layer insulating film 106 isformed by a material different from that of the inter-layer insulatingfilms 104 and 107, and is formed from silicon nitride (SiN), forexample.

In addition, the memory cell array 1 includes the via Z1<i> that extendsin the Z direction and reaches at least from an upper surface of theinter-layer insulating film 106 to a bottom surface of the word lineWL<i>. In the case of FIG. 5, the via Z1<i> reaches from an uppersurface of the inter-layer insulating film 107 to an upper surface ofthe via Z0<i>. The via Z1<i> penetrates the contact portion WLb<i> ofthe word line WL<i> that the via Z1<i> contacts. Side surfaces of eachof the vias Z1<i> and side surfaces of the word lines WL<0> to WL<i>have an insulating film 109 disposed between them, and the two are notin contact. The insulating film 109 is formed by a material differentfrom that of the inter-layer insulating film 106, and is formed fromsilicon oxide (SiO₂), for example. In addition, each of the vias Z1<i>has the projecting part Z1 b<i> that projects on both sides in the Xdirection at the same height as the inter-layer insulating film 106.This projecting part Z1 b<i> has a width that exceeds the insulatingfilm 109 to reach the contact portion WLb<i> in the X direction, and abottom surface of the projecting part Z1 b<i> contacts the contactportion WLb<i> and the insulating film 109. In other words, due to theabove-described connection structure of the contact region 1 b of thememory cell array 1, the via Z1<i> contacts the word line WL<i> whilebeing insulated from the word line WL<l> in a lower layer.

Next, manufacturing steps of the contact region 1 b of the memory cellarray 1 will be described.

FIGS. 6 to 13 are cross-sectional views describing the manufacturingsteps of the contact region of the memory cell array of thesemiconductor device according to the present embodiment.

First, the etching stop film 103 is deposited on each of the conductivefilms 101<i> (i=0 to 3) and the inter-layer insulating film 102. Each ofthe conductive films 101<i> is formed by titanium nitride (TiN), forexample, and functions as the via Z0<i>. The etching stop film 103 isformed by a metal oxide, for example, and will be a film for suppressingover-etching of the conductive film 101 during formation of a hole 122in a later step. Next, a plurality of the inter-layer insulating films104 and conductive films 105 are stacked alternately on the etching stopfilm 103. Now, the inter-layer insulating film 104 is formed by siliconoxide (SiO₂), for example. The conductive film 105 is formed fromtitanium nitride (TiN), for example, and functions as the word line WL.Next, as shown in FIG. 6, the conductive films 105 are formed in astepped shape in the contact region 1 b of the memory cell array 1. As aresult, a contact portion 105 b<i> is formed in each of the conductivefilms 105<i>.

Next, the inter-layer insulating film 106 is deposited on a stackedconductive film configured from the conductive films 101<0> to 101<3>.This inter-layer insulating film 106 contacts each of the contactportions 105 b<i>. The inter-layer insulating film 106 is formed by amaterial allowing an etching selectivity ratio to be taken with respectto materials of the inter-layer insulating film 104 and the inter-layerinsulating film 107 and insulating film 109 formed in a later step. Whenthe inter-layer insulating films 104 and 107 and the insulating film 109are formed by silicon oxide (SiO₂), the inter-layer insulating film 106is formed by silicon nitride (SiN), for example. Next, the inter-layerinsulating film 107 is deposited on top of the inter-layer insulatingfilm 106. Now, the inter-layer insulating film 107 is formed by siliconoxide (SiO₂), for example. Next, as shown in FIG. 7, a resist film 121having a pattern of the via Z1 is deposited on the inter-layerinsulating film 107.

Next, as shown in FIG. 8, the hole 122<i> reaching from an inter-layerinsulating film 107 upper surface to an upper surface of the etchingstop film 103 is formed at a position of each of the contact portions105 b<i>, by anisotropic etching using the resist film 121.

Next, as shown in FIG. 9, each of the holes 122<i> is continued to bedug out, by anisotropic etching using the resist film 121, until theetching stop film 103 is penetrated to expose an upper surface of theconductive film 101<i>. Note that a plurality of the holes 122 can beformed simultaneously during the steps shown in FIGS. 8 and 9.

Next, as shown in FIG. 10, ends of the conductive films 105<0> to 105<i>exposed in a side surface of the hole 122<i> (places 105 e shown by thebroken lines of FIG. 10) are selectively removed by isotropic etchingvia the hole 122<i>.

Next, the resist film 121 is removed, and then, as shown in FIG. 11, theinsulating film 109 is implanted in the place 105 e shown in FIG. 10.The insulating film 109 is formed by silicon oxide (SiO₂), for example.

Next, as shown in FIG. 12, an end of the inter-layer insulating film 106exposed in the side surface of the hole 122<i> is selectively removed,by isotropic etching via the hole 122<i>, until the upper surface of theuppermost layer conductive film 105<i> at each place is exposed. As aresult, a place 106 e for disposing the projecting part Z1 b<i> of thevia Z1<i> contacting the contact portion 105 b<i> is formed in the sidesurface of the hole 122<i>.

Finally, as shown in FIG. 13, a conductive film 108<i> is implanted inthe hole 122<i>, and then an upper surface of the conductive film 108<i>is planarized by the likes of CMP (Chemical Mechanical Polishing). Theconductive film 108<i> is formed by titanium nitride (TiN), for example,and functions as the via Z1<i>. As a result, as shown in FIG. 5, the viaZ1<i> contacting the word line WL<i> and the via Z0<i>, is formed.

As a result of the above manufacturing steps, the connection structureof the contact region 1 b of the memory cell array 1 shown in FIG. 5 isformed.

Next, advantages of the present embodiment will be described using acomparative example.

In a semiconductor device according to the comparative example employedherein, each of the word lines and the peripheral circuit areelectrically connected by a first via (corresponding to the via Z1 ofthe present embodiment) that reaches from the word line to an upperlayer wiring line, a second via that passes outside an arrangementregion of the word line to reach from the upper layer wiring line to athird via (corresponding to the via Z0 of the present embodiment), andthe third via that reaches from the second via to the peripheralcircuit. Note that the first via does not have a portion correspondingto the projecting part Z1 b of the present embodiment, and a bottomsurface of the first via directly contacts an upper surface of the wordline. In the case of the comparative example, interference between theword line of a lower layer and the via is avoided by once diverting acurrent path reaching from the word line to the peripheral circuit, tothe upper layer wiring line.

In the case of this comparative example, three vias become necessary forevery one word line. In particular, a space for disposing the second viabecomes unnecessarily required for the contact region of the memory cellarray, and this leads to an increase in chip size.

In this respect, in the case of the present embodiment, only the twovias Z1 and Z0 need be disposed for one word line WL, and when viewedfrom the Z direction, only a single via portion of arrangement regionneed be prepared. In other words, the present embodiment enables thespace for via arrangement to be suppressed to half or less, compared toin the comparative example.

Moreover, in the case of the comparative example, as previouslymentioned, the bottom surface of the first via and the upper surface ofthe word line are in direct contact, hence when forming a hole(corresponding to 122 of the present embodiment) for disposing the firstvia, a bottom surface of this hole must be matched to the upper surfaceof the word line. Now, when considering the case of forming a pluralityof first vias contacting a plurality of word lines of different heights,the holes for disposing these first vias will each have a differentdepth. Therefore, if it is attempted to form these holes simultaneously,there is a risk that due to the influence of etching of a deeper hole, ashallower hole is over-etched. In a particularly severe case, it is alsoconceivable that the hole not only penetrates the word line desired tobe brought into contact with the first via, but also ends up reachingthe word line of a lower layer.

In this respect, in the case of the present embodiment, not only is itpossible to align positions of the bottom surfaces of the vias Z1, butfurthermore, there is a connection structure presupposing that each ofthe vias Z1<i> penetrates the word lines WL<0> to WL<i>. Therefore, evenwhen the holes 122 are formed simultaneously, the risk of over-etchingwhen forming holes of different depths as in the comparative example,can be eliminated.

As is clear from the above, the present embodiment makes is possible toprovide: a semiconductor device that achieves a reduction in chip sizeby reducing space of a contact region and achieves a reduction inprocessing difficulty during via formation; and a method ofmanufacturing the same.

Second Embodiment

First, a connection structure of a memory cell array 1 and a peripheralcircuit on a semiconductor substrate related to a second embodiment willbe described exemplifying a connection structure of a word line WL andthe peripheral circuit.

FIG. 14 is a cross-sectional view of a contact region of the memory cellarray of a semiconductor device according to the present embodiment.FIG. 14 is a cross-sectional view of a via Z1<3> periphery.

A via Z1<i> of the present embodiment (i=0 to 3; in the case of FIG. 14,i=3) has a projecting part Z1 b<i> formed only on one of side surfacesfacing in the X direction, and contacts the word line WL<i> only on oneside in the X direction.

In the case of the first embodiment, the projecting part Z1 b<i> wasformed so as to surround an entire periphery of the via Z1<i>, butcontact with the word line WL<i> is possible even when the projectingpart Z1 b<i> is formed only on part of the periphery of the via Z1<i> asin the present embodiment. In other words, the present embodimentenables contact between the via Z1<i> and the word line WL<i>, similarlyto in the first embodiment, even when the word line WL<i> has a contactportion WLb<i> of a shape not allowing the entire periphery of the viaZ1<i> to be surrounded.

Next, manufacturing steps of a contact region 1 b of the memory cellarray 1 will be described.

FIGS. 15 to 18 are cross-sectional views describing the manufacturingsteps of the contact region of the memory cell array of thesemiconductor device according to the present embodiment.

First, a conductive film 201<i> (corresponding to 101 of FIG. 6)functioning as the via Z1<i> (i=0 to 3; in the case of FIGS. 15 to 18,i=3) and an inter-layer insulating film 202 (corresponding to 102 ofFIG. 6) have a stacked body formed thereon, the stacked body beingconfigured from: an etching stop film 203 (corresponding to 103 of FIG.6); a plurality of inter-layer insulating films 204 (corresponding to104 of FIG. 6); a plurality of conductive films 205 (corresponding to105 of FIG. 6) functioning as a plurality of the word lines WL; and aninter-layer insulating film 206 (corresponding to 106 of FIG. 7). Now,the inter-layer insulating film 206 is formed by a material allowing anetching selectivity ratio to be taken with respect to materials of theinter-layer insulating film 204 and an inter-layer insulating film 207(corresponding to 107 of FIG. 7) and insulating film 209 (correspondingto 109 of FIG. 11) formed in a later step. Next, ends of the inter-layerinsulating film 204, the conductive film 205, and the inter-layerinsulating film 206 are removed at a position of the conductive film201<i>, and then the inter-layer insulating film 207 is deposited on theconductive film 201<i>, the inter-layer insulating film 202, and theinter-layer insulating film 206. Next, as shown in FIG. 15, a resistfilm 221 having a pattern of the via Z1<i> is deposited on theinter-layer insulating film 207.

Next, as shown in FIG. 16, a hole 222<i> reaching from an upper surfaceof the inter-layer insulating film 206 to an upper surface of theconductive film 201<i> is formed at a position where the end of theconductive film 205 appears on a side surface, by anisotropic etchingusing the resist film 221.

Next, ends of the conductive films 205<0> to 205<i> exposed in the sidesurface of the hole 222<i> are selectively removed by isotropic etchingvia the hole 222<i>. Next, as shown in FIG. 17, the insulating film 209is implanted in said removed places.

Next, as shown in FIG. 18, an end of the inter-layer insulating film 206exposed in the side surface of the hole 222<i> is selectively removed,by isotropic etching via the hole 222<i>, until an upper surface of theconductive film 205<i> is exposed. As a result, a place 206 e fordisposing the projecting part Z1 b<i> of the via Z1<i> contacting acontact portion 205 b<i> is formed on one of side surfaces of the hole222<i>.

Next, the resist film 221 is detached. Finally, a conductive filmfunctioning as the via Z1<i> is implanted in the hole 222<i>, and thenan upper surface of this conductive film is planarized by the likes ofCMP. As a result, as shown in FIG. 14, the via Z1<i> contacting the wordline WL<i> and the via Z0<i>, is formed.

As a result of the above manufacturing steps, the connection structureof the contact region 1 b of the memory cell array 1 shown in FIG. 14 isformed.

As is clear from the above, the present embodiment also allows similaradvantages to those of the first embodiment to be obtained even whencontact is made with a wiring line of the memory cell array by part ofthe periphery of the via.

OTHERS

While certain embodiments have been described, these embodiments havebeen presented by way of example only, and are not intended to limit thescope of the inventions. Indeed, the novel methods and systems describedherein may be embodied in a variety of other forms; furthermore, variousomissions, substitutions and changes in the form of the methods andsystems described herein may be made without departing from the spiritof the inventions. The accompanying claims and their equivalents areintended to cover such forms or modifications as would fall within thescope and spirit of the inventions.

1. A semiconductor device, comprising: a stacked body including aplurality of first conductive films stacked via an inter-layerinsulating film; a first conductive body facing the stacked body toextend in a stacking direction; a plurality of first insulating films inthe same layers as the first conductive films and disposed between thefirst conductive body and the first conductive films, the firstconductive body including a projecting part that projects along tops ofone of the first insulating films and one of the first conductive films,and a lower surface of the projecting part contacting an upper surfaceof the one of the first conductive films; and a second insulating filmconfigured from a material different from that of the first insulatingfilm, disposed on the one of the first conductive films of the stackedbody, and disposed in the same layer as the projecting part of the firstconductive body.
 2. The semiconductor device according to claim 1,further comprising: a third insulating film configured from the samematerial as the first insulating film, and disposed in a more upperlayer than the second insulating film and the projecting part.
 3. Thesemiconductor device according to claim 1, further comprising: a secondconductive film extending in the stacking direction; and a plurality ofmemory cells disposed at intersections of the first conductive films andthe second conductive film.
 4. The semiconductor device according toclaim 1, wherein the first conductive body contacts the first conductivefilm disposed in an uppermost layer at a certain position when viewedfrom the stacking direction.
 5. The semiconductor device according toclaim 1, further comprising a second conductive body disposed between asemiconductor substrate and the first conductive films in the stackingdirection, wherein the first conductive body contacts an upper surfaceof the second conductive body at a bottom surface of the firstconductive body.
 6. The semiconductor device according to claim 1,further comprising a plurality of the first conductive bodies, wherein acertain first conductive body and another first conductive body contacta different first conductive film.
 7. The semiconductor device accordingto claim 6, wherein the first conductive films are formed in a steppedshape in which an end of each first conductive film configures one step,and the first conductive bodies contact the ends of the first conductivefilms formed in the stepped shape.
 8. The semiconductor device accordingto claim 6, wherein the first conductive bodies have a bottom surface inthe same position in the stacking direction.
 9. The semiconductor deviceaccording to claim 1, wherein the first conductive body has theprojecting part on both side surfaces facing in a direction intersectingthe stacking direction.
 10. The semiconductor device according to claim1, wherein the first conductive body has the projecting part only on oneof side surfaces facing in a direction intersecting the stackingdirection.
 11. The semiconductor device according to claim 1, whereinthe projecting part of the first conductive body contacts an uppersurface of one of the first insulating films at a side surface facing inthe stacking direction of the projecting part.
 12. A method ofmanufacturing a semiconductor device, comprising: forming a stacked bodyincluding a stacked plurality of first conductive films; depositing afirst insulating film on one of the first conductive films; forming ahole that extends in a stacking direction at least from an upper surfaceof the first insulating film to a bottom surface of a certain firstconductive film; removing ends of the first conductive films exposed ina side surface of the hole; implanting a plurality of second insulatingfilms configured from a material different from that of the firstinsulating film, in places of the removed ends of the first conductivefilms; removing an end of the first insulating film exposed in the sidesurface of the hole until an upper surface of the first conductive filmis exposed; and implanting a first conductive body in the hole.
 13. Themethod of manufacturing a semiconductor device according to claim 12,further comprising when removing the end of the first insulating film,selectively removing the first insulating film, of the first insulatingfilm and the second insulating films.
 14. The method of manufacturing asemiconductor device according to claim 12, further comprising: beforeforming the stacked body, depositing a second conductive body between asemiconductor substrate and a position of forming the stacked body inthe stacking direction; and when forming the hole, continuing to dig outthe stacked body until an upper surface of the second conductive body isexposed in a bottom part of the hole.
 15. The method of manufacturing asemiconductor device according to claim 14, further comprising afterdeposition of the second conductive body and before formation of thestacked body, depositing an etching stop film on the second conductivebody.
 16. The method of manufacturing a semiconductor device accordingto claim 12, further comprising after formation of the stacked body andbefore deposition of the first insulating film, forming, with respect toa certain first conductive film, a first portion projected from anarrangement region of a first conductive film in a layer above thiscertain first conductive film, when viewing from the stacking direction.17. The method of manufacturing a semiconductor device according toclaim 16, further comprising when forming the hole, forming the hole ata position where the first portion is exposed from both side surfacesfacing in a direction intersecting the stacking direction of the hole.18. The method of manufacturing a semiconductor device according toclaim 16, further comprising when forming the hole, forming the hole ata position where the first portion is exposed from one of side surfacesfacing in a direction intersecting the stacking direction of the hole.19. The method of manufacturing a semiconductor device according toclaim 16, further comprising when depositing the first insulating film,depositing the first insulating film so as to contact the first portionof the first conductive films.
 20. The method of manufacturing asemiconductor device according to claim 16, further comprising whenforming the hole, simultaneously forming a plurality of the holes havingthe same depth in the stacking direction.